KlettSintering

高性价比
只有一个表面有NanoWiring结构
剪切强度 (最高可达60MPa)
高抗拉强度 (大于 KlettWelding)
Stack
Stack
KLETTSINTERING过程

我们如何制造KlettSintering

结构化
涂层

只有一个表面有NanoWiring结构

定位
施加压力

温度 (从170°C)
压力 (从10 MPa)
时间 (从10 s)

KLETTSINTERING OVERVIEW

KlettSintering Applications

Automotive busbar Power transport by car/plane/truck
Housing technology
Power Electronics / Die Attach
Contact link
Ceramics on metal (e.g. sensors)

KlettSintering Video Tutorial

Watch video about KlettSintering presented by our CEO

KLETTSINTERING+ PROCESS

KlettSintering+

Minimum preparation effort
No surface has NanoWiring structure
Use of KlettWelding Tape
High-strength, repairable

KlettSintering+ Applications

Highest flexibility application
High current busbars
3D electronics

How We Manufacture KlettSintering+

Structuring
Coating

No surface has NanoWiring structure

Positioning
Compressing

From 170°C
Pressure from 10 MPa
Time from 120 s

Comparison of NanoWired connection technologies

The following tables shows the comparison between KlettSintering and KlettSintering+ connection technologies.

KlettSintering
KlettSintering+
NanoWiring
One Side
KlettWelding Tape
Process Temperature (°C)
170...240
170...240
Process Pressure (MPa)
10...30
10...30
Process Time (s)
120...300
120...300
Shear Strength (MPa)
20...50
30...60
Main Advantage
High shear strength
Very fine pitch
Only one NW level
No NW stage
High shear strength
Typical Application
Die Attach
Flip Chip
Die Attach
Flip Chip
High current busbar

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