Interconnection

Stress-free joining of thin film wafers
Bonding of Hybrid systems
High mechanical unevenness is tolerated
Stack
Stack
ADVANCED TECHNOLOGY

Process Advantages

<0 sec

High Speed Cu-Sintering

0°C

Low Temperature Process

<0um

Bond Line Thickness
Fast Process
● Process could be done under 1 minute
Easy Process
● No Printing/Dispensing
● No Drying
● No Cleaning
Filling Up Irregularities
High mechanical unevenness is tolerated (>>10µm)
Excellent Bond Properties
● Bond line thickness <<3µm => Lowest inductivity
● Stress-free joining of thin film wafers
● 3µm – 300mm Contact 0Ω
● One Step- D2D, D2W, W2W Process
● Room temperature process KlettWelding

Get in touch! Book your online meeting now