Thermal Interface Material
ADVANCED TECHNOLOGY
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High Speed Cu-Sintering
0°C
Low Temperature Process
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Bond Line Thickness
Fast Process
● Process could be done under 1 minute
Easy Process
● No Printing/Dispensing
● No Drying
● No Cleaning
● No Drying
● No Cleaning
Filling Up Irregularities
High mechanical unevenness is tolerated (>>10µm)
Excellent Bond Properties
● Bond line thickness <<3µm => Lowest inductivity
● Stress-free joining of thin film wafers
● 3µm – 300mm Contact 0Ω
● One Step- D2D, D2W, W2W Process
● Room temperature process KlettWelding
● Stress-free joining of thin film wafers
● 3µm – 300mm Contact 0Ω
● One Step- D2D, D2W, W2W Process
● Room temperature process KlettWelding
