Masking with standard lithography or other masking processes

Masking with standard lithography or other masking processes

Welcome to the second of seven posts in our "How does NanoWiring work?" post series.

Not every surface should be fully contacted. The standard is not only single but hundreds or thousands of contacts. If there is already a contact structure on the substrate, as on a wafer, all contacts can be short-circuited by a sputter layer (seed layer). Masking processes are used to define the locations where the contact zones are to be created. Here, electrically conductive contacts do not necessarily have to be produced; thermal and mechanical connections are also possible. The exact masking process used depends on the structure widths (pad/pitch) of the contacts to be created. As soon as the intended areas have been macroscopically defined, the nanowiring process begins and metallic "hairs" grow on the surface.

This galvanic process is similar to the pad printing process. An industrially produced sponge with a special porosity layer is filled with electrolytes. It is pressed onto the surface by means of a pressing device in the NanoWiring Cube. The nanowires grow inside the porosity layer at the prepared contact point. The porosity layer defines the structure and density of the metallic wires, as well as their spacing and length.

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